shottky barrier diode rb050l-40 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1) small power mold type. (pmds) 2) low i r 3) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f 1 - - 0.55 v i f =3.0a v f 2 - - 0.50 v i f =1.5a reverse current i r --1ma v r =40v forward voltage storage temperature ? 40 to ? 125 (*1)mounted on epoxy board. 180half sine wave parameter forward current surge peak (60hz ? 1cyc) 70 junction temperature 125 reverse voltage (dc) 40 average rectified forward voltage 3 parameter limits reverse voltage (repetitive peak) 40 pmds 2.0 4.2 2.0 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max rohm : pmds jedec : sod-106 manufacture date 5 3 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 1/3 2011.04 - rev.d data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb050l-40 ? electrical characteristic curves (ta=25c) 0.1 1 10 100 1000 0.001 0.1 10 1000 rth(j-a) rth(j-c) mounted on epoxy board 1ms im=100ma if=1a 300us time 0 50 100 150 200 250 300 0.1 1 10 100 t ifsm 0 5 10 15 20 ave:9.3ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 0.01 0.1 1 10 0 100 200 300 400 500 600 ta=-25 ta=125 ta=75 ta=25 0.01 0.1 1 10 100 1000 10000 100000 1000000 0 5 10 15 20 25 30 35 40 ta=125 ta=75 ta=25 ta=-25 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz 480 490 500 510 520 530 ave:503.8mv ta=25 if=3a n=30pcs 0 10 20 30 40 50 60 70 80 90 100 ta=25 vr=40v n=30pcs ave:9.069ua 500 510 520 530 540 550 560 570 580 590 600 ave:579.1pf ta=25 f=1mhz vr=0v n=10pcs 0 50 100 150 200 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 50 100 150 200 ave:157.0a 8.3ms ifsm 1cyc 0 1 2 3 4 5 012345 dc d=1/2 sin(?180) 2/3 2011.04 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb050l-40 0 2 4 6 8 10 0 10203040 0 1 2 3 4 5 6 7 0 255075100125 0 1 2 3 4 5 6 7 0 25 50 75 100 125 reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) sin(?180) dc d=1/2 sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=20v 0a 0v sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=20v 0a 0v 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave:17.6kv no break at 30kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.04 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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